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MMG20271H9t1 1 rf device data freescale semiconductor, inc. enhancement mode phemt technology (e--phemt) high linearity amplifier the MMG20271H9 is a high dynamic range, single--stage, low noise amplifier mmic, housed in a sot--89 standard plastic package. with high oip3 and low noise figure, it can be utilized as a driver amplifier in the transmit chain and as a second--stage lna in the receive chain . it is ideal for cellular, pcs, lte, td--scdma, w--cdma base station, wireless lan and other systems in the 1500 to 2700 mhz frequency range. features ? frequency: 1500--2700 mhz ? noise figure: 1.7 db @ 2140 mhz ? p1db: 27.5 dbm @ 2140 mhz ? small--signal gain: 16 db @ 2140 mhz ? third order output intercept point: 43.1 dbm @ 2140 mhz ? class 2 hbm esd immunity ? single 5 v supply ? supply current: 215 ma ? 50 ohm operation (some external matching required) ? cost--effective sot--89 surface mount plastic package ? in tape and reel. t1 suffix = 1,000 units, 12 mm tape width, 7--inch reel. table 1. typical performance (1) characteristic symbol 1500 mhz 1900 mhz 2140 mhz 2700 mhz unit noise figure nf 1.9 1.8 1.7 1.8 db input return loss (s11) irl -- 1 1 --12.1 --13.5 --18.5 db output return loss (s22) orl -- 2 4 --25.3 -- 3 5 -- 2 8 db small--signal gain (s21) g p 18 16.6 16 14.3 db power output @ 1db compression p1db 27.5 27.5 27.5 27.6 dbm third order input intercept point iip3 23 25.2 27.1 29.9 dbm third order output intercept point oip3 41 41.8 43.1 44.2 dbm 1. v dd =5vdc,t a =25 ? c, 50 ohm system, application circuit tuned for specified frequency. table 2. maximum ratings rating symbol value unit supply voltage v dd 6 v supply current i dd 400 ma rf input power p in 25 dbm storage temperature range t stg --65 to +150 ? c junction temperature t j 175 ? c table 3. thermal characteristics characteristic symbol value (2) unit thermal resistance, junction to case case temperature 91 ? c, 5 vdc, 220 ma, no rf applied r ? jc 29 ? c/w 2. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. freescale semiconductor technical data document number: MMG20271H9 rev. 1, 9/2014 MMG20271H9t1 1500--2700 mhz, 16 db 27.5 dbm e--phemt lna/gpa sot--89 ? freescale semiconductor, inc., 2011, 2014. a ll rights reserved.
2 rf device data freescale semiconductor, inc. MMG20271H9t1 table 4. electrical characteristics (v dd = 5 vdc, 2140 mhz, t a =25 ? c, 50 ohm system, in freescale application circuit) characteristic symbol min typ max unit small--signal gain (s21) g p 13.4 16 ? db input return loss (s11) irl ? --13.5 ? db output return loss (s22) orl ? -- 3 5 ? db power output @ 1db compression p1db ? 27.5 ? dbm third order input intercept point iip3 ? 27.1 ? dbm third order output intercept point oip3 ? 43.1 ? dbm reverse isolation (s12) |s12| ? -- 2 2 ? db noise figure nf ? 1.7 ? db supply current i dd 177 215 271 ma supply voltage v dd ? 5 ? v table 5. esd protection characteristics test methodology class human body model (per jesd22--a114) 2 machine model (per eia/jesd22--a115) a charge device model (per jesd22--c101) iv table 6. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 1 260 ? c table 7. functional pin description pin number pin function 1 rf in 2 ground 3 rf out /dc supply figure 1. functional diagram 3 2 1 2
MMG20271H9t1 3 rf device data freescale semiconductor, inc. 50 ohm application circuit: 2140 mhz z4 0.020 ?? 0.021 ? microstrip z5 0.010 ?? 0.021 ? microstrip z6 0.165 ?? 0.021 ? microstrip z1 0.120 ?? 0.021 ? microstrip z2 0.030 ?? 0.040 ? microstrip z3 0.030 ?? 0.040 ? microstrip figure 2. MMG20271H9t1 test circuit schematic rf output rf input v supply c3 c2 z1 z2 c1 z5 z6 c5 l2 z3 z4 c4 bias circuit 1 3 l1 table 8. MMG20271H9t1 test circuit c omponent designations and values part description part number manufacturer c1 1.5 pf chip capacitor grm1555c1h1r5ba01 murata c2, c3 18 pf chip capacitors grm1555c1h180ga01 murata c4 0.1 ? f chip capacitor grm155r61a104k01d murata c5 1.2 pf chip capacitor grm1555c1h1r2ba01 murata l1 (1) 0 ? , 1 a chip resistor erj2ge0r00x panasonic l2 23 nh inductor 0402cs--23nxgl coilcraft pcb 0.010 ? , ? r = 3.48, multilayer ro4350b rogers 1. location l1 can be an inductor, resistor or jumper depending on frequency.
4 rf device data freescale semiconductor, inc. MMG20271H9t1 50 ohm application circuit: 2140 mhz figure 3. MMG20271H9t1 test ci rcuit component layout v dd rf in rf out l2 c3 c5 c2 c1 c4 l1 sot--89--3c rev. 0 table 8. MMG20271H9t1 test circuit c omponent designations and values part description part number manufacturer c1 1.5 pf chip capacitor grm1555c1h1r5ba01 murata c2, c3 18 pf chip capacitors grm1555c1h180ga01 murata c4 0.1 ? f chip capacitor grm155r61a104k01d murata c5 1.2 pf chip capacitor grm1555c1h1r2ba01 murata l1 (1) 0 ? , 1 a chip resistor erj2ge0r00x panasonic l2 23 nh inductor 0402cs--23nxgl coilcraft pcb 0.010 ? , ? r = 3.48, multilayer ro4350b rogers 1. location l1 can be an inductor, resistor or jumper depending on frequency. (test circuit component designations and values table repeated for reference.)
MMG20271H9t1 5 rf device data freescale semiconductor, inc. 50 ohm typical characteristics: 2140 mhz 37 45 41 2040 2090 2140 2190 2240 43 39 v dd =5vdc 1 mhz tone spacing t c =--40 ? c 25 ? c 85 ? c 11 19 2000 f, frequency (mhz) figure 4. small--signal gain (s21) versus frequency versus temperature v dd =5vdc 15 g p , small--signal gain (db) 17 13 2075 2150 2225 2300 85 ? c 25 ? c -- 1 8 -- 1 0 f, frequency (mhz) figure 5. input return loss (s11) versus frequency versus temperature irl, input return loss (db) -- 1 4 v dd =5vdc 2000 2075 2150 2225 2300 -- 1 2 -- 1 6 t c =85 ? c -- 4 0 ? c 25 ? c -- 5 0 -- 1 0 f, frequency (mhz) figure 6. output return loss (s22) versus frequency versus temperature orl, output return loss (db) -- 3 0 v dd =5vdc 2000 2075 2150 2225 2300 -- 2 0 -- 4 0 25 ? c 22 30 26 24 f, frequency (mhz) figure 7. p1db versus frequency versus temperature p1db, 1 db compression point (dbm) 28 v dd =5vdc t c =--40 ? c 25 ? c 85 ? c 2040 2090 2140 2190 2240 f, frequency (mhz) figure 8. third order output intercept point versus frequency versus temperature oip3, third order output intercept point (dbm) 0.2 3.4 f, frequency (mhz) figure 9. noise figure versus frequency versus temperature 1.8 1.0 nf, noise figure (db) v dd =5vdc t c =85 ? c 25 ? c -- 4 0 ? c 2.6 2000 2075 2150 2225 2300 t c =--40 ? c 85 ? c t c =--40 ? c
6 rf device data freescale semiconductor, inc. MMG20271H9t1 50 ohm typical characteristics: 2140 mhz -- 7 0 -- 2 0 16 p out , output power (dbm) figure 10. single--carrier w--cdma adjacent channel power ratio versus output power -- 3 0 -- 4 0 -- 5 0 26 22 20 18 acpr, adjacent channel power ratio (dbc) 25 ? c -- 4 0 ? c v dd = 5 vdc, f = 2140 mhz single--carrier w--cdma 3.84 mhz channel bandwidth input signal par = 8.5 db @ 0.01% probab ility ( ccdf) -- 6 0 24 t c =85 ? c
MMG20271H9t1 7 rf device data freescale semiconductor, inc. 50 ohm application circuit: 1900 mhz z4 0.020 ?? 0.021 ? microstrip z5 0.010 ?? 0.021 ? microstrip z6 0.122 ?? 0.021 ? microstrip z1 0.097 ?? 0.021 ? microstrip z2 0.030 ?? 0.040 ? microstrip z3 0.030 ?? 0.040 ? microstrip figure 11. MMG20271H9t1 test circuit schematic rf output rf input v supply c3 c2 z1 z2 c1 z5 z6 c5 l2 z3 z4 c4 bias circuit 1 3 l1 table 9. MMG20271H9t1 test circuit c omponent designations and values part description part number manufacturer c1 1.8 pf chip capacitor grm1555c1h1r8ba01 murata c2, c3 18 pf chip capacitors grm1555c1h180ga01 murata c4 0.1 ? f chip capacitor grm155r61a104k01d murata c5 1.5 pf chip capacitor grm1555c1h1r5ba01 murata l1 (1) 1.2 nh inductor 0402cs--1n2xjl coilcraft l2 23 nh inductor 0402cs--23nxgl coilcraft pcb 0.010 ? , ? r = 3.48, multilayer ro4350b rogers 1. location l1 can be an inductor, resistor or jumper depending on frequency.
8 rf device data freescale semiconductor, inc. MMG20271H9t1 50 ohm application circuit: 1900 mhz figure 12. MMG20271H9t1 test circuit component layout v dd rf in rf out l2 c3 c5 c2 c1 c4 l1 sot--89--3c rev. 0 table 9. MMG20271H9t1 test circuit c omponent designations and values part description part number manufacturer c1 1.8 pf chip capacitor grm1555c1h1r8ba01 murata c2, c3 18 pf chip capacitors grm1555c1h180ga01 murata c4 0.1 ? f chip capacitor grm155r61a104k01d murata c5 1.5 pf chip capacitor grm1555c1h1r5ba01 murata l1 (1) 1.2 nh inductor 0402cs--1n2xjl coilcraft l2 23 nh inductor 0402cs--23nxgl coilcraft pcb 0.010 ? , ? r = 3.48, multilayer ro4350b rogers 1. location l1 can be an inductor, resistor or jumper depending on frequency. (test circuit component designations and values table repeated for reference.)
MMG20271H9t1 9 rf device data freescale semiconductor, inc. 50 ohm typical characteristics: 1900 mhz 0.2 3.4 1.8 1.0 2.6 37 45 41 43 39 11 19 1750 f, frequency (mhz) figure 13. small--signal gain (s21) versus frequency v dd =5vdc 15 g p , small--signal gain (db) 17 13 1825 1900 1975 2050 -- 2 4 -- 8 f, frequency (mhz) figure 14. input return loss (s11) versus frequency irl, input return loss (db) -- 1 6 v dd =5vdc -- 1 2 -- 2 0 -- 5 0 -- 1 0 f, frequency (mhz) figure 15. output return loss (s22) versus frequency orl, output return loss (db) -- 3 0 v dd =5vdc -- 2 0 -- 4 0 22 30 26 24 f, frequency (mhz) figure 16. p1db versus frequency p1db, 1 db compression point (dbm) 28 v dd =5vdc 1800 1850 1900 1950 2000 f, frequency (mhz) figure 17. third order output intercept point versus frequency oip3, third order output intercept point (dbm) f, frequency (mhz) figure 18. noise figure versus frequency nf, noise figure (db) v dd =5vdc 1750 1825 1900 1975 205 0 1750 1825 1900 1975 2050 1800 1850 1900 1950 2000 1750 1825 1900 1975 2050 v dd =5vdc 1 mhz tone spacing
10 rf device data freescale semiconductor, inc. MMG20271H9t1 50 ohm application circuit: 2700 mhz z4 0.020 ?? 0.021 ? microstrip z5 0.010 ?? 0.021 ? microstrip z6 0.048 ?? 0.021 ? microstrip z1 0.080 ?? 0.021 ? microstrip z2 0.030 ?? 0.040 ? microstrip z3 0.030 ?? 0.040 ? microstrip figure 19. MMG20271H9t1 test circuit schematic rf output rf input v supply c3 c2 z1 z2 c1 z5 z6 c5 l2 z3 z4 c4 bias circuit 1 3 l1 table 10. MMG20271H9t1 test circuit c omponent designations and values part description part number manufacturer c1 1.5 pf chip capacitor grm1555c1h1r5ba01 murata c2, c3 18 pf chip capacitors grm1555c1h180ga01 murata c4 0.1 ? f chip capacitor grm155r61a104k01d murata c5 1.0 pf chip capacitor grm1555c1h1r0ba01 murata l1 (1) 0 ? , 1 a chip resistor erj2ge0r00x panasonic l2 23 nh inductor 0402cs--23nxgl coilcraft pcb 0.010 ? , ? r = 3.48, multilayer ro4350b rogers 1. location l1 can be an inductor, resistor or jumper depending on frequency.
MMG20271H9t1 11 rf device data freescale semiconductor, inc. 50 ohm application circuit: 2700 mhz figure 20. MMG20271H9t1 test circuit component layout v dd rf in rf out l2 c3 c5 c2 c1 c4 l1 sot--89--3c rev. 0 table 10. MMG20271H9t1 test circuit c omponent designations and values part description part number manufacturer c1 1.5 pf chip capacitor grm1555c1h1r5ba01 murata c2, c3 18 pf chip capacitors grm1555c1h180ga01 murata c4 0.1 ? f chip capacitor grm155r61a104k01d murata c5 1.0 pf chip capacitor grm1555c1h1r0ba01 murata l1 (1) 0 ? , 1 a chip resistor erj2ge0r00x panasonic l2 23 nh inductor 0402cs--23nxgl coilcraft pcb 0.010 ? , ? r = 3.48, multilayer ro4350b rogers 1. location l1 can be an inductor, resistor or jumper depending on frequency. (test circuit component designations and values table repeated for reference.)
12 rf device data freescale semiconductor, inc. MMG20271H9t1 50 ohm typical characteristics: 2700 mhz 0.2 3.4 1.8 1.0 2.6 37 45 41 43 39 9 17 2550 f, frequency (mhz) figure 21. small--signal gain (s21) versus frequency v dd =5vdc 13 g p , small--signal gain (db) 15 11 2625 2700 2775 2850 -- 2 4 -- 8 f, frequency (mhz) figure 22. input return loss (s11) versus frequency irl, input return loss (db) -- 1 6 v dd =5vdc -- 1 2 -- 2 0 -- 5 0 -- 1 0 f, frequency (mhz) figure 23. output return loss (s22) versus frequency orl, output return loss (db) -- 3 0 v dd =5vdc -- 2 0 -- 4 0 22 30 26 24 f, frequency (mhz) figure 24. p1db versus frequency p1db, 1 db compression point (dbm) 28 v dd =5vdc 2600 2650 2700 2750 2800 f, frequency (mhz) figure 25. third order output intercept point versus frequency oip3, third order output intercept point (dbm) f, frequency (mhz) figure 26. noise figure versus frequency nf, noise figure (db) v dd =5vdc 2550 2625 2700 2775 2850 2550 2625 2700 2775 2850 2600 2650 2700 2750 2800 2550 2625 2700 2775 2850 v dd =5vdc 1 mhz tone spacing
MMG20271H9t1 13 rf device data freescale semiconductor, inc. figure 27. pcb pad layout for sot--89a 4.35 3.00 2x 45 ? 3x 0.70 2x 1.50 0.85 2x 1.25 1.90 figure 28. product marking mg271h yyww
14 rf device data freescale semiconductor, inc. MMG20271H9t1 package dimensions
MMG20271H9t1 15 rf device data freescale semiconductor, inc.
16 rf device data freescale semiconductor, inc. MMG20271H9t1
MMG20271H9t1 17 rf device data freescale semiconductor, inc. product documentation, software and tools refer to the following resources to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers ? an3100: general purpose amplifier and mmic biasing software ? .s2p file development tools ? printed circuit boards for software and tools, do a part number search at http://www .freescale.com, and select th e ?part number? link. go to software & tools on the part?s product summary page to download the respective tool. failure analysis at this time, because of the physical characteristics of the part, failure analysis is limited to electrical signature analysis. in cases where freescale is contractually obligated to perform failure analysis (fa) services, full fa may be performed by third party vendors with moderate success. for updates c ontact your local freescale sales office. revision history the following table summarizes revisions to this document. revision date description 0 dec. 2011 ? initial release of data sheet 1 sept. 2014 ? table 2, maximum ratings: updated junction temperature from 150 ? c to 175 ? c to reflect recent test results of the device, p. 1 ? revised failure analysis information, p. 17
18 rf device data freescale semiconductor, inc. MMG20271H9t1 information in this document is provided solely to enable system and software implementers to use freescale products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation, or guarantee regarding the suitability of its products fo r any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all li ability, including without limit ation consequential or incidental damages. ?typical? parameters that may be provided in freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. freescale and the freescale logo are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. all other product or service names are the property of their respective owners. e 2011, 2014 freescale semiconductor, inc. how to reach us: home page: freescale.com web support: freescale.com/support document number: MMG20271H9 rev. 1, 9/2014

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